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Resolution enhancement for advanced mask aligner lithography using phase-shifting photomasks

: Weichelt, T.; Vogler, U.; Stuerzebecher, L.; Voelkel, R.; Zeitner, U.D.

Postprint (6 MByte; PDF; )

Optics Express 22 (2014), No.13, pp.16310-16321
ISSN: 1094-4087
Bundesministerium für Bildung und Forschung BMBF
03Z1HN32; Fertigungstechnologien für hoch entwickelte Mikro und Nanooptiken
Journal Article, Electronic Publication
Fraunhofer IOF ()

The application of the phase-shift method allows a significant resolution enhancement for proximity lithography in mask aligners. Typically a resolution of 3 mu m (half-pitch) at a proximity distance of 30 mu m is achieved utilizing binary photomasks. By using an alternating aperture phase shift photomask (AAPSM), a resolution of 1.5 mu m (half-pitch) for non-periodic lines and spaces pattern was demonstrated at 30 mu m proximity gap. In a second attempt a diffractive photomask design for an elbow pattern having a half-pitch of 2 mu m was developed with an iterative design algorithm. The photomask was fabricated by electron-beam lithography and consists of binary amplitude and phase levels.