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InAs/(GaIn)Sb short-period superlattices for focal plane arrays

Kurzperiodige InAs/(GaIn)Sb Übergitter für Bildfeldmatrizen
: Rehm, R.; Walther, M.; Schmitz, J.; Fleißner, J.; Fuchs, F.; Cabanski, W.; Ziegler, J.


Andresen, B.F. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Infrared Technology and Applications XXXI. Vol.1 : 28 March - 1 April 2005, Orlando, Florida, USA; Infrared Technology Applications Conference held as part of SPIE'S International Defense and Security Symposium, DSS
Bellingham/Wash.: SPIE, 2005 (SPIE Proceedings Series 5783)
ISBN: 0-8194-5768-X
Infrared Technology and Applications Conference <31, 2004, Orlando/Fla.>
International Defense and Security Symposium (DSS) <2005, Orlando/Fla.>
Conference Paper
Fraunhofer IAF ()
infrared absorption; Infrarot; superlattice; Übergitter; GaSb; thermal imaging; Thermographie

An infrared camera based on a 256x256 focal plane array for the Mid-IR spectral range (3-5 mu m) has been realized for the first time with InAs/GaSb short-period superlattices. The detector shows a cut-off wavelength of 5.4 mu m and reveals a quantum efficiency of 30%. The noise equivalent temperature difference (NETD) reaches 9.4 mK at 73 K with F/2 optics and 6.5 ms integration time. Excellent thermal images with low NETD values and a very good modulation transfer function are presented. Furthermore, a new method to passivate InAs/GaInSb superlattice photodiodes for the 8-10 mu m regime is demonstrated. The approach is based on the epitaxial overgrowth of wet-etched mesa diodes using lattice matched AlGaAsSb. A complete suppression of surface leakage currents in small sized test diodes with 70 mu m diameter is observed.