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Metamorphic 50 nm InAs-Channel HEMT

Metamorpher 50 nm InAs-Tunnel HEMT
: Leuther, A.; Weber, R.; Dammann, M.; Schlechtweg, M.; Mikulla, M.; Walther, M.; Weimann, G.


Thayne, I.:
17th International Conference on Indium Phosphide and Related Materials, IPRM 2005. Proceedings. CD-ROM
New York, NY: IEEE, 2005
ISBN: 0-7803-8892-5
International Conference on Indium Phosphide and Related Materials (IPRM) <17, 2005, Glasgow/UK>
Conference Paper
Fraunhofer IAF ()
low power; verbrauchsarm; low noise; rauscharm; amplifier; Verstärker; InAs

A 50 nm gate length metamorphic HEMT with InAs-channel and InAlAs-barriers for high frequency low power applications has been developed. Using a composite channel layout with backside doping an on-state breakdown voltage of 1.2 V and a g(ind m) max/g(ind O) ratio of four at V(ind DS) = 1.2 V was achieved. A low g(ind m) dispersion of only 5 % was measured. The realized three-stage 70 GHz LNA shows a power dissipation as low as 1.9 mW with an associated small signal gain of 6 dB.