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Industrial application of heterostructure device simulation

Industrielle Anwendung von Heterostruktur Bauelement Simulation
: Palankovski, V.; Quay, R.; Selberherr, S.


IEEE Electron Devices Society:
22nd GaAs IC Symposium 2000. Technical digest : IEEE Gallium Arsenide Integrated Circuit Symposium. Seattle, Washington, November 5 - 8, 2000
Piscataway, NJ: IEEE, 2000
ISBN: 0-7803-5968-2
ISBN: 0-7803-5969-0
ISBN: 0-7803-5970-4
GaAs IC Symposium <22, 2000, Seattle/Wash.>
Conference Paper
Fraunhofer IAF ()
HBT; HEMT; heterostructure; Heterostruktur; III-V semiconductor; III-V Halbleiter; simulation tool

We give an overview of the state-of-the-art of heterostructure RF-device simulation for industrial application based on III-V compound semiconductors. Results for Heterostructure Bipolar Transistors (HBTs) and for High Electron Mobility Transistors (HEMTs) are presented in good agreement with measured data of industrially relevant devices.