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250 nm period grating transferred by proximity i-line mask-aligner lithography

: Bourgin, Yannick; Käsebier, Thomas; Zeitner, Uwe Detlef


Optics Letters 39 (2014), No.6, pp.1665-1668
ISSN: 0146-9592
Journal Article
Fraunhofer IOF ()
aspect ratio; refractive index

This Letter, describes a fabrication method based on a high refractive index binary phase mask combined with a suitable illumination setup, which produces a close to normal incidence illumination, to fabricate sub-micrometer diffraction gratings. The method uses the i-line (365 nm) of a mercury lamp spectrum in a mask-aligner in proximity mode, to avoid any contact between the mask and the wafer, which is normally used to produce high resolution structures. The transfer of the structure in a fused silica wafer demonstrates that mask-aligner lithography can produce high aspect ratio sub-wavelength structures without resorting to any contact between mask and wafer.