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Analysis of HBT behavior after strong electrothermal stress

Zur Analyse des HBT Verhaltens nach starker elektrothermischer Belastung

: Palankovski, V.; Selberherr, S.; Quay, R.; Schultheis, R.

DOI: 10.1109/SISPAD.2000.871254

	IEEE Electron Devices Society: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2000 Piscataway: IEEE Operations Center, 2000 ISBN: 0-7803-6279-9 pp.245-248
	International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) <5, 2000, Seattle/Wash.>

	English
	Conference Paper
	Fraunhofer IAF ()
	HBT; reliability; Zuverlässigkeit; electrothermal effect; elektrothermischer Effekt; stress; Belastung; InGaP; GaAs; SiN

Abstract
We present two-dimensional simulations of one-finger power InGaP/GaAs Heterojunction Bipolar Transistors (HBTs) before and after both electrical and thermal stress aging. It Is well known that GaAs-HBTs with InGaP emitter material can be improved with respect to reliability if the emitter material covers the complete p-doped base layer forming outside the active emitter the no-called InGaP ledge. We analyze the influence of the ledge thickness and of of the surface charges on the device performance and its impact on reliability. The possibility to explain device degradation mechanisms by means of numerical simulation is of high practical importance.