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Simulation of Gallium-Arsenide based high electron mobility transistors

Simulation von Gallium-Arsenid basierenden High Electron Mobility Transistoren
: Quay, R.; Massler, H.; Kellner, W.; Grasser, T.; Palankovski, V.; Selberherr, S.


IEEE Electron Devices Society:
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2000
Piscataway: IEEE Operations Center, 2000
ISBN: 0-7803-6279-9
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) <5, 2000, Seattle/Wash.>
Conference Paper
Fraunhofer IAF ()
HEMT; device simulation; Bauelement Simulation; impact ionisation; Stoßionisation; Schottky contact; Schottky Kontakt; self-heating; Selbsterwärmung

We present results for hydrodynamic simulations of pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors (HEMTs) obtained by the two-dimensional device simulator MINIMOS-NT. The concise analysis of industrially relevant HEMT power devices of two different foundries for gate-lengths between l(g) = 140 nm and l(g) = 300 nm is carried out. Several aspects, including thermal and breakdown effects, the insulator- semiconductor interface, and the Schottky contact are considered.