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A global self-heating model for device simulation

Ein globales Modell für die Selbsterwärmung in der Bauelement Simulation
 
: Grasser, T.; Palankovski, V.; Quay, R.; Selberherr, S.

Lane, W.A. ; National Microelectronics Research Centre -NMRC-, Cork:
30th European Solid-State Device Research Conference 2000. Proceedings : Cork, Ireland, 11 - 13 September 2000
Paris: Editions Frontieres, 2000
ISBN: 2-86332-248-6
pp.324-327
European Solid-State Device Research Conference (ESSDERC) <30, 2000, Cork>
English
Conference Paper
Fraunhofer IAF ()
temperature; Temperatur; device simulation; Bauelement Simulation; self-heating; Selbsterwärmung

Abstract
For the design and simulation of state-of-the-art devices self-heating effects must be considered. This is a very difficult task as thermal effects are basically 3D effects and can thus not as easily be reduced to 2D as it is possible for many purely electrical problems. Furthermore, the thermal active area is much larger than the electrical area and the thermal boundary conditions are difficult to measure. We propose a simple global self-heating model which is capable of accurate consideration of thermal effects and is because of its computational efficiency sometimes even better suited for some problems than the solution of the standard lattice heat flow equation.

: http://publica.fraunhofer.de/documents/N-2975.html