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Strain adjustment in (GaIn)(AsSb)/(AlGa)(AsSb) QWs for 2.3.-2.7. µm laser structures

Einstellung der Verspannung in (GaIn)(AsSb)/(AlGa)(AsSb) Qws für 2,3-2,7 µm Laserstrukturen
 
: Simanowski, S.; Herres, N.; Mermelstein, C.; Kiefer, R.; Schmitz, J.; Walther, M.; Wagner, J.; Weimann, G.

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Journal of Crystal Growth 209 (2000), pp.15-20
ISSN: 0022-0248
English
Journal Article
Fraunhofer IAF ()
AlGaAsSb; GaInAsSb; GaSb; mid infrared; mittleres Infrarot; molecular beam epitaxy; Molekularstrahlepitaxie; semiconductor laser; Halbleiterlaser; strain; pseudomorphe Verspannung

Abstract
The influence of strain in Ga(0.7)In(0.3)As(y)Sb(1-y) quantum wells (QWs) embedded in Al(0.24)Ga(0.76)As(y)Sb(1-Y) barriers on the photoluminescence (PL) emission wavelength and intensity has been investigated. The strain was adjusted by varying the As content in the QW and barrier layers. For As mole fractions in the (GaIn)(AsSb) QW layers between y = 0.25 and 0.05, the average strain perpendicular to the growth plane changes from (delta a/a) = 2.0 x 10(exp -3) to 10.4 x 10(exp -3) for lattice matched (AlGa)(AsSb) barriers. At room temperature, highest PL intensities are obtained for QW structures with a net compressive strain of (delta a/a) = 8.7 x 10(exp -3). In order to compensate the compressive strain in the QWs, strain-balanced laser core structures with barriers under tensile strain have been investigated. This was found to allow a reduction of the average strain in the laser core without shifting its emission wavelength. Ridge waveguide large optical cavity (LOC) laser diodes containing three compressively strained (Galn)(AsSb) QWs embedded between lattice matched (AlGa)(AsSb) barriers show room temperature cw laser emission at a wavelength of 2.26 mu m. For 64 mu m wide and 600 mu m long devices, a differential quantum efficiency of 43% and a threshold current density of 395 A/cm2 with a characteristic temperature of T(0) = 110 K are obtained.

: http://publica.fraunhofer.de/documents/N-2973.html