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1480nm InGaAsP LOC broad-area laser diodes

: Fendler, D.; Moehrle, M.; Spiegelberg, M.; Rehbein, W.; Grote, N.


IEEE Photonics Society:
High Power Diode Lasers and Systems Conference, HPD 2013. Conference Proceedings : 16-17 October 2013, Coventry, UK
Piscataway, NJ: IEEE, 2013
ISBN: 978-1-4799-2747-0
ISBN: 978-1-4799-2748-7
High Power Diode Lasers and Systems Conference (HPD) <2013, Coventry>
Conference Paper
Fraunhofer HHI ()

1480nm InGaAsP large optical cavity broad-area laser diodes have been developed and optimized for pulsed and CW operation. The optical output powers at 20 degrees C are 18 W and 3.7 W, respectively. In accelerated ageing tests no noticeable degradation was observed.