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Incorporation of a self-aligned selective emitter to realize highly efficient (12.8%) Si nanowire solar cells

: Um, H.-D.; Park, K.-T.; Jung, J.-Y.; Li, X.; Zhou, K.; Jee, S.-W.; Lee, J.-H.


Nanoscale 6 (2014), No.10, pp.5193-5199
ISSN: 2040-3364
ISSN: 2040-3372
Journal Article
Fraunhofer IWM ( IMWS) ()

Formation of a selective emitter in crystalline silicon solar cells improves photovoltaic conversion efficiency by decoupling emitter regions for light absorption (moderately doped) and metallization (degenerately doped). However, use of a selective emitter in silicon nanowire (Si NW) solar cells is technologically challenging because of difficulties in forming robust Ohmic contacts that interface directly with the top-ends of nanowires. Here we describe a self-aligned selective emitter successfully integrated into an antireflective Si NW solar cell. By one-step metal-assisted chemical etching, NW arrays formed only at light-absorbing areas between top-metal grids while selectively retaining Ohmic contact regions underneath the metal grids. We observed a remarkable similar to 40% enhancement in blue responses of internal quantum efficiency, corresponding to a conversion efficiency of 12.8% in comparison to the 8.05% of a conventional NW solar cell.