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Room-temperature low-threshold low-loss continous-wave operation of 2.26 µm GaInAsSb/AlGaAsSb quantum-well laser diodes

Raumtemperatur cw-Betrieb von 2.26 µm GaInAsSb/AlGaAsSb Quantenfilm-Laserdioden mit niedrigen Schwellströmen und niedrigen Verlusten
: Mermelstein, C.; Simanowski, S.; Mayer, M.; Kiefer, R.; Schmitz, J.; Walther, M.; Wagner, J.


Applied Physics Letters 77 (2000), No.11, pp.1581-1583
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer IAF ()
mid infrared; mittleres Infrarot; GaSb; GaInAsSb; AlGaAsSb; broadended waveguide; verbreiterte Wellenleiterstruktur; quantum-well; Quantenfilm; semiconductor laser diode; Halbleiterlaserdiode; quantum efficiency; Quanteneffizienz; Ausgangsleistungseffizienz; output power efficiency; threshold current; Schwellstrom; loss coefficient; Verlustkoeffizient; cw-operation; cw-Betrieb; lasing spectra; Laserspektrum

Strained single- and triple-quantum-well (SQW and TQW), large optical cavity GaInAsSb/ AlGaAsSb/GaSb laser diodes emitting at 2.26 mu m are investigated. Internal loss coefficients as low as 5 and 7.7 cm(exp -1) for the SQW and TQW, respectively, and relatively high internal quantum efficiencies of 65% (SQW) and 69% (TQW) were obtained. Extrapolated threshold current densities for infinite cavity lengths of 55 and 150 A/cm2 have been deduced for the SQW and TQW, respectively. These values scale very well with the number of QWs and are among the lowest reported for diode lasers in this wavelength range. A differential quantum efficiency as high as 50% and a total power efficiency of 23% were achieved at 280 K. The temperature dependence of the threshold current density revealed a high characteristic temperature of 110 K. Single-ended output powers of 240 mW in continuous-wave mode and exceeding 0.5 W in pulsed operation were obtained for a TQW laser with high-reflection/antireflection coated facets at 280 K, mounted substrate-side down.