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Development of Bi-spectral InAs/GaSb type II superlattice image detectors

: Stadelmann, T.; Wörl, A.; Wauro, M.; Daumer, V.; Niemasz, J.; Luppold, W.; Simon, T.; Riedel, M.; Rehm, R.; Walther, M.


Andresen, B.F. (Ed.) ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Infrared technology and applications XL : 5–8 May 2014, Baltimore, Maryland, United States
Bellingham, WA: SPIE, 2014 (Proceedings of SPIE 9070)
ISBN: 978-1-6284-1007-5
Paper 90700V
Conference "Infrared Technology and Applications"<40, 2014, Baltimore/Md.>
Conference Paper
Fraunhofer IAF ()
InAs/GaSb; type II; superlattice; infrared; image sensor

InAs/GaSb superlattices are characterized by a broken-gap type II band alignment. Their effective band gap can be engineered to match mid to long wavelength infrared (IR) photon energies. Fraunhofer IAF has developed image detectors for threat warning systems based on this material system that are capable of spatially and temporally coincident detection in two mid-IR wavelength ranges. We review the present status of the processing technology, report continuous improvements achieved in key areas of detector performance, including defect density and noise behavior, and present initial results for statistical characterization of ensembles of detector elements with respect to diode characteristics and noise.