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A scalable compact small-signal mHEMT model accounting for distributed effects in sub-millimeter wave and terahertz applications

: Ohlrogge, M.; Seelmann-Eggebert, M.; Leuther, A.; Massler, H.; Tessmann, A.; Weber, R.; Schwantuschke, D.; Schlechtweg, M.; Ambacher, O.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Microwave Theory and Techniques Society:
International Microwave Symposium, IMS 2014 : 1-6 June 2014, Tampa Bay, Florida
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-3868-1
ISBN: 978-1-4799-3869-8
4 pp.
International Microwave Symposium (IMS) <2014, Tampa Bay/Fla.>
Conference Paper
Fraunhofer IAF ()
high electron mobility transistor (HEMT); small signal model; submillimeter wave; EM-simulation; millimeter wave technology

In this paper we utilize a new approach for a small signal model which is scalable from very small to rather large transistors in a wide frequency range from 50 MHz up to 500 GHz. We show that with increasing frequency and decreasing transistor size we need to take into account termination effects at the open ends of the transistor electrodes. This new approach is based on a decomposition of the transistor into multiport sections. These sections are simulated individually by an electromagnetic field solver and then parameterized by compact networks. The model is verified by S-parameter measurements up to 450 Ghz.