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A 600 GHz low-noise amplifier module

: Tessmann, A.; Leuther, A.; Massler, H.; Hurm, V.; Kuri, M.; Zink, M.; Riessle, M.; Stulz, H.P.; Schlechtweg, M.; Ambacher, O.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Microwave Theory and Techniques Society:
International Microwave Symposium, IMS 2014 : 1-6 June 2014, Tampa Bay, Florida
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-3868-1
ISBN: 978-1-4799-3869-8
3 pp.
International Microwave Symposium (IMS) <2014, Tampa Bay/Fla.>
Conference Paper
Fraunhofer IAF ()
grounded coplanar waveguide (GCPW); low-noise amplifier (LNA); metamorphic high electron mobility transistor (mHEMT); packaging; terahertz monolithic integrated circuit (TMIC)

A compact WR-1.5 (500-750 GHz) low-noise amplifier (LNA) circuit has been developed, based on a grounded coplanar waveguide (GCPW) technology utilizing 20 nm metamorphic high electron mobility transistors (mHEMTs). The realized six-stage LNA TMIC achieved a maximum gain of 15.4 dB at 576 GHz and more than 10 dB in the frequency range from 555 to 619 GHz. For low-loss packaging of the circuit, a waveguide-to-microstrip transition has been fabricated on a 20 µm thick GaAs substrate, demonstrating an insertion loss of only 1 dB between 500 and 720 GHz. The realized LNA module achieved a small-signal gain of 14.1 dB at 600 GHz and a room temperature (T = 293 K) noise figure of 15 dB at the frequency of operation.