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A microwave high-power GaN transistor with highly-integrated active digital switch-mode driver circuit

: Maroldt, S.; Brueckner, P.; Quay, R.; Ambacher, O.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Microwave Theory and Techniques Society:
International Microwave Symposium, IMS 2014 : 1-6 June 2014, Tampa Bay, Florida
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-3868-1
ISBN: 978-1-4799-3869-8
4 pp.
International Microwave Symposium (IMS) <2014, Tampa Bay/Fla.>
Conference Paper
Fraunhofer IAF ()
switch mode power amplifier; GaN; HEMT; MMIC; inverter; driver circuit; digital

An inverter-based digital switch-mode driver circuit, highly-integrated with a GaN power transistor is presented. The layout is fully scalable in output power and therefore suitable for amplifiers with power levels of higher than 10 W. The circuit enables a switch-mode operation from DC to 3 GHz. A consistent analysis of digital switching measurements and active harmonic load-pull results is performed. Measurements at 2 GHz and 30 V yield a drain efficiency of 82 % and 6 W of output power, while a gain up to 35 dB and more than 76 % overall circuit efficiency were achieved.