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A 92 GHz GaN HEMT voltage-controlled oscillator MMIC

: Weber, R.; Schwantuschke, D.; Brueckner, P.; Quay, R.; Raay, F. van; Ambacher, O.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Microwave Theory and Techniques Society:
International Microwave Symposium, IMS 2014 : 1-6 June 2014, Tampa Bay, Florida
Piscataway, NJ: IEEE, 2014
ISBN: 978-1-4799-3868-1
ISBN: 978-1-4799-3869-8
4 pp.
International Microwave Symposium (IMS) <2014, Tampa Bay/Fla.>
Conference Paper
Fraunhofer IAF ()
voltage-controlled oscillator (VCO); gallium nitride (GaN); monolithically microwave integrated circuit (MMIC); high electron mobility transistor (HEMT); W-band (75-110 GHz); grounded coplanar waveguide (GCPW)

In this paper, we report state-of-the-art high frequency performance of a W-band voltage-controlled oscillator (VCO) MMIC realized in a 0.1 µm AlGaN/GaN HEMT technology. The oscillation frequency of the VCO can be tuned between 85.6 and 92.7 GHz, which is a relative tuning bandwidth of 8 %. The achieved maximum output power is as high as 10.6 dBm. The phase noise of the VCO varies from -80.2 to -90.2 dBc/Hz at 1 MHz offset from the carrier over the tuning voltage range.