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A new approach for GaN normally-off power transistors: Lateral recess for positive threshold voltage

: Waltereit, P.; Leuther, A.; Rüster, J.; Czap, H.; Preschle, M.; Iannucci, R.; Müller, S.; Mikulla, M.; Ambacher, O.

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International Conference on Compound Semiconductor MANufacturing TECHnology, CS MANTECH 2014. Digest of papers. Online resource : "Sharing Ideas Throughout the Industry", May 19th - 22nd, 2014, Denver, Colorado
Denver/Colo., 2014
International Conference on Compound Semiconductor MANufacturing TECHnology (CS MANTECH) <2014, Denver/Colo.>
Conference Paper, Electronic Publication
Fraunhofer IAF ()
GaN; normally-off; HEMT

We present a new approach for normally-off transistors based on a recess leading to a laterally induced positive threshold voltage. The fabrication process is demonstrated to yield devices with positive threshold voltage. The breakdown voltage of these devices compares well with that of equivalent normally-on devices. Future work is directed towards passivation of the devices in order to reduce the impact of surface traps on device properties.