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243 GHz low-noise amplifier MMICs and modules based on metamorphic HEMT technology

: Tessmann, A.; Hurm, V.; Leuther, A.; Massler, H.; Weber, R.; Kuri, M.; Riessle, M.; Stulz, H.-P.; Zink, M.; Schlechtweg, M.; Ambacher, O.; Närhi, T.


International journal of microwave and wireless technologies 6 (2014), No.3/4, pp.215-223
ISSN: 1759-0795
ISSN: 1759-0787
European Microwave Week (EuMW) <16, 2013, Nuremberg>
Journal Article, Conference Paper
Fraunhofer IAF ()
circuit design and applications; Low-noise and communication receivers

Two compact H-band (220-325 GHz) low-noise amplifier MMICs have been developed, based on a grounded coplanar waveguide (GCPW) technology utilizing 50 and 35 nm metamorphic high electron mobility transistors (mHEMTs). For low-loss packaging of the circuits, a set of waveguide-to-microstrip transitions has been realized on 50-µm-thick GaAs substrates demonstrating an insertion loss of <0.5 dB at 243 GHz. By applying the 50 nm gate-length process, a four-stage cascode amplifier module achieved a small-signal gain of 30.6 dB at 243 GHz and more than 28 dB in the bandwidth from 218 to 280 GHz. A second amplifier module, based on the 35-nm mHEMT technology, demonstrated a considerably improved gain of 34.6 dB at 243 GHz and more than 32 dB between 210 and 280 GHz. At the operating frequency, the two broadband low-noise amplifier modules achieved a room temperature noise figure of 5.6 dB (50 nm) and 5.0 dB (35 nm), respectively.