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2005
Conference Paper
Titel
A novel light-emitting structure for the 3-5 µm spectral range
Abstract
We present a novel hybrid light emitting device design based on a standard InAlGaAs/GaAs high-power laser diode array chip as a pump source and a narrow-gap PbS e-layer as active optical material. Maximum cw output powers of more than 1.1 mW and slope efficiencies of 0.4 mW/A are obtained at 25°C. The external power efficiency amounts to 3.5×10-2 %. The emission wavelength is 4.2 µm, with a half width of 770 nm (50 meV). Details about the optimizationof the emitter material and device design are discussed as well.
Author(s)