Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

A novel light-emitting structure for the 3-5 µm spectral range

: Tomm, J.W.; Weik, F.; Glatthaar, R.; Vetter, U.; Nurnus, J.; Lambrecht, A.; Spellenberg, B.; Bassler, M.; Behringer, M.; Luft, J.

Osinski, M. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Physics and simulation of optoelectronic devices XIII : 24 - 27 January 2005, San Jose, California, USA
Bellingham/Wash.: SPIE, 2005 (SPIE Proceedings Series 5722)
ISBN: 0-8194-5696-9
Conference "Physics and Simulation of Optoelectronic Devices" <2005, San Jose/Calif.>
Conference Paper
Fraunhofer IPM ()
infrared; IR; light emitting device; 4-5 µm wavelength range

We present a novel hybrid light emitting device design based on a standard InAlGaAs/GaAs high-power laser diode array chip as a pump source and a narrow-gap PbS e-layer as active optical material. Maximum cw output powers of more than 1.1 mW and slope efficiencies of 0.4 mW/A are obtained at 25°C. The external power efficiency amounts to 3.5×10-2 %. The emission wavelength is 4.2 µm, with a half width of 770 nm (50 meV). Details about the optimizationof the emitter material and device design are discussed as well.