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Luminance and current distribution of hybrid circular GaN-based resonant-cavity light-emitting diodes with lateral current injection on the n- and p-side

: Passow, T.; Kunzer, M.; Börner, P.; Pletschen, W.; Köhler, K.; Wagner, J.


Physica status solidi. C 11 (2014), No.3-4, pp.817-820
ISSN: 1610-1634
ISSN: 1610-1642
ISSN: 1862-6351
International Conference on Nitride Semiconductors (ICNS) <10, 2013, Washington/DC>
Journal Article, Conference Paper
Fraunhofer IAF ()
resonant-cavity light-emitting diode; AlInN; GaN; ITO; current distribution; lateral current injection

Resonant-cavity light-emitting diodes emitting at around 400 nm based on an undoped bottom AlInN/GaN distributed Bragg reflector (DBR) and a top dielectric SiO(2)/ZrO(2) DBR with circular emitting apertures of diameters ranging from 5 to 200 µm are demonstrated. The current distribution is investigated by luminance distribution imaging and three-dimensional device simulations for different current densities. The current distribution exhibits a maximum in the aperture centre or is homogeneous up to an aperture diameter of 50 µm independent of the current density. A minimum occurs in the aperture centre for larger diameters increasing with increasing diameter and current density. The current distribution improves with larger n-GaN thickness and higher contact resistance between the transparent In(2)O(3):Sn (ITO) electrode and the p-GaN contact layer.