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Monolithic and hybrid integrated GaAs-based photoreceivers for 40 Gbit/s optical communication

Monolithisch und hybrid integrierte GaAs-Basierende Photoempfänger für die 40 Gbit/s optische Datenübertragung
 
: Hurm, V.; Leven, A.; Benz, W.; Berking, M.; Bronner, W.; Hülsmann, A.; Köhler, K.; Ludwig, M.; Massler, H.; Rosenzweig, J.; Schlechtweg, M.; Sohn, J.; Walcher, H.; Weimann, G.

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IEEE Lasers and Electro-Optics Society:
LEOS 2000, IEEE Lasers and Electro-Optics Society. 13th Annual Meeting. Vol.1 : IEEE annual meeting conference proceedings. 13 - 16 November 2000, the Westin Rio Mar Beach, Rio Grande, Puerto Rico
Piscataway, NJ: IEEE, 2000 (2000 IEEE Annual Meeting Conference Proceedings)
ISBN: 0-7803-5947-X
ISBN: 0-7803-5948-8
ISBN: 0-7803-5949-6
pp.281-282
IEEE Lasers and Electro-Optics Society (Annual Meeting) <13, 2000, Rio Grande/Puerto Rico>
English
Conference Paper
Fraunhofer IAF ()
photoreceiver; Photoempfänger; waveguide photodiode; Wellenleiterphotodiode; 40 Gbit/s optical communication; 40 Gbit/s

Abstract
40 Gbit/s 1. 55 mu m photoreceivers were manufactured using GaAs-based HEMT distributed amplifiers. The photoreceivers include either a monolithic integrated surface-illuminated PIN photodiode or a flip-chip mounted edge-illuminated multimode waveguide photodiode.

: http://publica.fraunhofer.de/documents/N-2847.html