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Epitaxial wafer equivalent solar cells with overgrown SiO2 layer and varying doping profile to reduce the influence of defects
urn:nbn:de:0011-n-2838587 (517 KByte PDF)
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Created on: 25.4.2014
|Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society; Institute of Electrical and Electronics Engineers -IEEE-, Power & Energy Society -PES-:|
39th IEEE Photovoltaic Specialists Conference, PVSC 2013 : Tampa, Florida, USA, 16.06.2013-21.06.2013
Piscataway, NJ: IEEE, 2013
|Photovoltaic Specialists Conference (PVSC) <39, 2013, Tampa/Fla.>|
| Conference Paper, Electronic Publication|
|Fraunhofer ISE ()|
| Materialien - Solarzellen und Technologie; Silicium-Photovoltaik; kristalline Silicium-Dünnschichtsolarzelle; silicon thin film; wafer equivalent; layer overgrowth; density|
Epitaxial wafer equivalent solar cells require a reflecting rear side to reach similar efficiencies as wafer based cells. This can be achieved by implementing a SiO2 layer using the epitaxial lateral overgrowth technique. In this work defect structure and density within the silicon layers are discussed. As defect densities rise towards the SiO2 layers, solar cells are fabricated with increasing sizes of moderately doped back surface fields to reduce their influence. Thereby, a benefit of 3 % absolute in efficiency is obtained. However, the best cell with an efficiency of 14.1 % is still limited by the reduced crystal quality.