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Series resistance mapping of III-V multijunction solar cells based on luminescence imaging

: Nesswetter, H.; Dyck, W.; Lugli, P.; Bett, A.W.; Zimmermann, C.G.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society; Institute of Electrical and Electronics Engineers -IEEE-, Power & Energy Society -PES-:
39th IEEE Photovoltaic Specialists Conference, PVSC 2013 : Tampa, Florida, USA, 16.06.2013-21.06.2013
Piscataway, NJ: IEEE, 2013
ISBN: 978-1-4799-3299-3
Photovoltaic Specialists Conference (PVSC) <39, 2013, Tampa/Fla.>
Conference Paper
Fraunhofer ISE ()
Materialien - Solarzellen und Technologie; III-V und Konzentrator-Photovoltaik; alternative Photovoltaik-Technologie; III-V Epitaxie und Solarzellen; Solarzellen und Bauelemente; luminescence

A method for spatially resolved series resistance measurements of Ga0.5In0.5P/Ga(In)As/Ge triple-junction solar cells based on electro- and photoluminescence imaging is presented. The results gained from luminescence images of all three subcells clearly indicate the main contributions to the series resistance like interrupted gridfingers, the frontside metallization itself and the top cell emitter layer. Test cells with partially electron irradiated areas are used to demonstrate that the method is not sensitive to inhomogeneous dark I-V parameters.