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Epitaxial growth and device fabrication of GaN based electronic and optoelectronic structures

Epitaktisches Wachstum und Bandelementfertigung von GaN basierten elektronischen und optoelektronischen Strukturen
: Müller, S.; Quay, R.; Sommer, F.; Vollrath, F.; Kiefer, R.; Köhler, K.; Wagner, J.

EW MOVPE X, 10th European Workshop on Metalorganic Vapour Phase Epitaxy : EW MOVPE X
Lecce: Editoria Scientifica Elletronica, 2003
ISBN: 88-8305-007-X
European Workshop on Metalorganic Vapour Phase Epitaxy (EW MOVPE) <10, 2003, Lecce/italien>
Conference Paper
Fraunhofer IAF ()
GaN; AlGaN; blue laser; blaue Laser; LED; HEMT; output power; Ausgangsleistung; MOVPE

At the Fraunhofer IAF both single and multiwafer low-pressure MOVPE reactors are used for the growth of a) GaN/AlGaN layer sequences for the fabrication of high electron mobility transistors (HEMTs) and b) complex GaInN/GaN/AlGaN layer structures for violet and UV LEDs as well as violet emitting diode lasers In the following both growth related issues as well as results on devices fabricated from these epitaxial layer sequences will be discussed in section 2 for electronic devices and in section 3 for light emitting diodes and diode lasers.