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An ultra-black silicon absorber

 
: Steglich, Martin; Lehr, Dennis; Ratzsch, Stephan; Käsebier, Thomas; Schrempel, Frank; Kley, Ernst-Bernhard; Tünnermann, Andreas

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Laser & photonics reviews 8 (2014), No.2, pp.L13-L17
ISSN: 1863-8880
ISSN: 1863-8899
English
Journal Article
Fraunhofer IOF ()
light absorber; black silicon; atomic layer deposition; ICP-RIE; spectroscopy; silicon nanostructures

Abstract
An ultra-black (A > 99%) broadband absorber concept on the basis of a needle-like silicon nanostructure called Black Silicon is proposed. The absorber comprises Black Silicon established by inductively coupled plasma reactive ion etching (ICP-RIE) on a highly doped, degenerated silicon substrate. Improved absorbers also incorporate an additional oxide capping layer on the nanostructures and reach an absorptance of A > 99.5% in the range of 350 to 2000 nm and A ? 99.8% between 1000 and 1250 nm. Fabrication of the absorbers is consistent with CMOS standards and requires no lithography.

: http://publica.fraunhofer.de/documents/N-283272.html