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Melt depth and time variations during pulsed laser thermal annealing with one and more pulses

Variation von Schmelztiefe und -zeit während der gepulsten Laserausheilung mit einem und mehreren Pulsen
: Hackenberg, Moritz; Rommel, Mathias; Rumler, M; Lorenz, Jürgen; Pichler, Peter; Huet, Karim; Negru, Razvan; Fisicaro, Giuseppe; Magna, Antonino la; Taleb, Nadjib; Quillec, M.

Postprint urn:nbn:de:0011-n-2832205 (613 KByte PDF)
MD5 Fingerprint: 086aa7af70e5c5a756278fc6b4e5577e
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Created on: 12.6.2014

Institute of Electrical and Electronics Engineers -IEEE-:
ESSDERC 2013, Proceedings of the 43rd European Solid-State Device Research Conférence : Bucharest, Romania, September 16-20, 2013
Piscataway, NJ: IEEE, 2013
ISBN: 1-4799-0647-6
ISBN: 978-1-4799-0647-5
European Solid-State Device Research Conference (ESSDERC) <43, 2013, Bucharest>
European Commission EC
FP7; 258547; ATEMOX
Conference Paper, Electronic Publication
Fraunhofer IISB ()
silicon; laser thermal annealing; melt depth; melt time

In this work we present transient reflectivity measurements, maximum melt depths, and surface topographies of ion implanted silicon samples after pulsed excimer laser thermal annealing in the melting regime. The samples were annealed with different laser energies and number of pulses. We found that the melt dynamics change after the first laser pulse resulting in a shorter melt time but deeper melt depth. This can be explained by a change in reflectivity due to boron activation, surface modifications and small changes in the oxide thickness.