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High-mobility metal-oxide thin-film transistors by spray deposition of environmentally friendly precursors

 
: Oertel, S.; Jank, M.P.M.; Teuber, E.; Bauer, A.J.; Frey, L.

:

Barber, Z.H. ; European Materials Research Society -EMRS-:
European Materials Research Society (E-MRS) Spring Meeting 2013 : Symposium O "Synthesis, Processing and Characterization of Nanoscale Multi Functional Oxide Films IV"; May 27 - 31, 2013, Strasbourg, France
Amsterdam: Elsevier, 2014 (Thin solid films 553.2014)
pp.114-117
European Materials Research Society (Spring Meeting) <2013, Strasbourg>
Symposium O "Synthesis, Processing and Characterization of Nanoscale Multi Functional Oxide Films" <4, 2013, Strasbourg>
European Commission EC
FP7-NMP; 263042; POINTS
English
Conference Paper, Journal Article
Fraunhofer IISB ()

Abstract
The synthesis of versatile, and non-toxic precursors for ambient-air deposition of semiconducting metal-oxide thin films by spray pyrolysis is reported. The resulting thin films yield stable and reproducible performance in thin-film transistors. The precursors are based on reactions of metal salts and an organic ammonium source in water. The precursor preparation is highly versatile with respect to low-level handling requirements (i.e. in air) and miscibility for the synthesis of customized mixed metal oxides. The precursor solutions are deposited by spray pyrolysis and integrated into bottom-gate test structures with staggered source and drain contacts. Indium-zinc oxide thin films deposited from a precursorwith an [In]/[Zn] ratio of 3:1 exhibit an on-off current ratio of 10(6) with a calculated saturation mobility of 14.1 cm(2) V-1 s(-1) +/- 1.1 cm(2) V-1 s(-1) at a drain voltage of 40 V. The demonstrated route to non-toxicmolecular precursors for low-temperature thin-film processing in ambient atmosphere benefits from low cost of educts, environmentally friendly solvents, minimized health risk when compared to nanoparticle processing, and an excellent performance for electronic applications.

: http://publica.fraunhofer.de/documents/N-281955.html