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Site-specific metrology, inspection, and failure analysis of three-dimensional interconnects using focused ion beam technology

: Altmann, F.; Young, R.J.


Journal of micro/nanolithography, MEMS and MOEMS 13 (2014), No.1, Art. 011202, 12 pp.
ISSN: 1537-1646
ISSN: 1932-5150
ISSN: 1932-5134
Journal Article
Fraunhofer IWM ( IMWS) ()
integrated circuits; interconnects; metrology; scanning microscopy

Today three-dimensional system-in-package integration together with advanced interconnect technologies based on through silicon vias, through encapsulant vias, and microbumps are considered some of the most promising enabling technologies for “More than Moore” solutions. These technologies involve vertical die stacking or chip embedding with high-density interconnects and are based on combinations of process steps that come from formerly strictly separated technology areas. Thus, there is an increasing need to understand a large number of different interface properties, to control and optimize processes, and to avoid defect formation that could affect reliability. This complexity, in terms of design, new materials, and material combinations, also requires the development of new failure analysis tools to support these developments. The application potential of a new fast plasma focused ion beam (FIB) system for metrology and failure analysis is demonstrated in several selected case studies. The higher material removal rate of this system improves the range of application fields and/or the analysis throughput. This makes the plasma-FIB a very attractive tool for the analysis of relatively large interconnect structures without any need for mechanical preparation steps.