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Spectral sensitivity of hot carrier solar cells

: Hirst, L.C.; Lumb, M.P.; Hoheisel, R.; Philipps, S.P.; Bett, A.W.; Walters, R.J.; Bailey, C.G.


Solar energy materials and solar cells 120 (2014), Part B, pp.610-615
ISSN: 0927-0248
Journal Article
Fraunhofer ISE ()
Materialien - Solarzellen und Technologie; III-V und Konzentrator-Photovoltaik; Farbstoff; Organische und Neuartige Solarzellen; Alternative Photovoltaik-Technologien; III-V Epitaxie und Solarzellen; Solarzellen und Bauelemente; carrier solar cell; photovoltaics; spectrum

In this paper we present detailed balance simulations which determine the material parameters required to produce hot carrier solar cell (HCSC) annual energy yields comparable with that of multi-junction (MJ) systems. We demonstrate that HCSCs are less spectrally sensitive than equivalent MJ devices providing significant motivation for pursuing their development. Spectral variation in a given location over the course of the day and throughout the year means that the HCSC provides more consistent power production. The HCSC can also be developed for a standard reference spectrum and still perform optimally in a variety of locations with different atmospheric conditions, unlike the location sensitive performance of MJ devices. We show that an ideal hot carrier solar cell with bandgap 0.69 eV under 2000× concentration would require a thermalization coefficient View the MathML source<0.1WK−1cm−2 to produce more power over the course of the year than an InGaP/GaAs/Ge triple junction device located at Solar Village in Saudi Arabia. The lowest experimentally demonstrated thermalization coefficient is View the MathML source9.5WK−1cm−2 indicating that further materials development is required to achieve this target.