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Hall factor calculation for the characterization of transport properties in n-channel 4H-SiC MOSFETs

Berechnung des Hallfaktors zur Analyse der Transporteigenschaften in n-Kanal-4H-SiC-MOSFETs
: Uhnevionak, U.; Burenkov, A.; Strenger, C.; Mortet, V.; Bedel-Peireira, E.; Cristiano, F.; Bauer, A.J.; Pichler, Peter


Okumura, H.:
Silicon Carbide and Related Materials 2013. Vol.1 : Selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan
Dürnten: Trans Tech Publications, 2014 (Materials Science Forum 778-780)
ISBN: 978-3-03835-010-1 (Print)
ISBN: 978-3-03795-705-9 (CD-ROM)
ISBN: 978-3-03835-010-1 (Print + CD-ROM)
ISBN: 978-3-03826-391-3 (eBook)
International Conference on Silicon Carbide and Related Materials (ICSCRM) <15, 2013, Miyazaki>
Bundesministerium für Bildung und Forschung BMBF
Program Inter Carnot Fraunhofer (PICF); 01SF0804; MobiSiC
Conference Paper
Fraunhofer IISB ()
hall factor; hall-effect measurements; N-Channel 4H-SiC MOSFETs

For the characterization of n-channel 4H-SiC MOSFETs, current-voltage and Hall-effect measurements were carried out at room temperature. To interpret the Hall-effect measurements, the Hall factor for the electron transport in the channel of SiC MOSFETs was evaluated, for the first time. The method of the Hall factor calculation is based on the interdependence with mobility components via the respective scattering relaxation times. The results of the calculation reveal a strong dependence of the Hall factor on the gate voltage. Depending on the gate voltage applied, the values of the Hall factor vary between 1.3 and 1.5. Sheet carrier density and drift mobility values derived from the Hall-effect measurements using our new gate-voltage-dependent Hall factor show very good agreement with sim ulations performed with Sentaurus Device of Synopsys.