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Double-sided cooling and thermo-electrical management of power transients for silicon chips on DCB-substrates for converter applications: Design, technology and test

: Wunderle, B.; Manier, C.-A.; Abo Ras, M.; Springborn, M.; May, D.; Oppermann, H.; Toepper, M.; Mrossko, R.; Xhonneux, T.; Caroff, T.; Maurer, W.; Mitova, R.


Institute of Electrical and Electronics Engineers -IEEE-:
19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013 : Berlin, Germany, 25 - 27 September 2013
Piscataway, NJ: IEEE, 2013
ISBN: 978-1-4799-2271-0 (Print)
ISBN: 978-1-4799-2273-4 (online)
International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) <19, 2013, Berlin>
Conference Paper
Fraunhofer ENAS ()

This paper deals with the system design, technology and test of a novel concept of integrating Si and SiC power dies along with thermo-electric coolers in order to thermally manage transients occurring during operation. The concept features double-sided cooling as well as new materials and joining technologies to integrate the dies such as transient liquid phase bonding/soldering and sintering. Coupled-field simulations are used to predict thermal performance and are verified by especially designed test stands to very good agreement. This paper is the second in a series of publications on the ongoing work.