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Bandwidth improvement of cw THz receivers by Be doping of low-temperature-grown InGaAs/InAlAs heterostructures

: Globisch, B.; Stanze, D.; Dietz, R.J.B.; Göbel, T.; Schell, M.


IEEE Microwave Theory and Techniques Society; Fraunhofer-Institut für Physikalische Messtechnik -IPM-, Freiburg/Brsg.:
38th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2013 : Mainz, Germany, 1 - 6 September 2013
Piscataway, NJ: IEEE, 2013
ISBN: 978-1-4673-4717-4 (online)
ISBN: 978-1-4673-4715-0 (print)
2 pp.
International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) <38, 2013, Mainz>
Conference Paper
Fraunhofer HHI ()

LTG InGaAs/InAlAs based cw THz receivers can be fine-tuned by Be doping, which is an advantage towards their LTG GaAs counterparts. By increasing Be doping we reduce carrier trapping time, resulting in larger bandwidth. As a tradeoff, the current response is reduced.