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Extracting physical properties of arbitrarily shaped laser-doped micro-scale areas in semiconductors

 
: Heinrich, M.; Kluska, S.; Hameiri, Z.; Hoex, B.; Aberle, A.G.

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Applied Physics Letters 103 (2013), No.26, Art. 262103, 4 pp.
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
ISSN: 1931-9401 (online)
English
Journal Article
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; Dotierung und Diffusion; Kontaktierung und Strukturierung; Messtechnik und Produktionskontrolle; Doping; Resistivity; Cells

Abstract
We present a method that allows the extraction of relevant physical properties such as sheet resistance and dopant profile from arbitrarily shaped laser-doped micro-scale areas formed in semiconductors with a focused pulsed laser beam. The key feature of the method is to use large laser-doped areas with an identical average number of laser pulses per area (laser pulse density) as the arbitrarily shaped areas. The method is verified using sheet resistance measurements on laser-doped silicon samples. Furthermore, the method is extended to doping with continuous-wave lasers by using the average number of passes per area or density of passes.

: http://publica.fraunhofer.de/documents/N-275574.html