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On the temperature dependence of the hall factor in n-channel 4H-SiC MOSFETs

Über die Temperaturabhängigkeit des Hall Faktors in n-Kanal 4H-SiC MOSFETs
 
: Uhnevionak, V.; Burenkov, A.; Strenger, C.; Bauer, A.J.; Pichler, P.

:

Shenai, K. ; Electrochemical Society -ECS-:
Gallium Nitride and Silicon Carbide Power Technologies 3 : Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies 3, held in San Francisco, CA from October 28-31, 2013 as part of the ECS Fall 2013 Meeting
Pennington, NJ: ECS, 2013 (ECS transactions 58.2013, Nr.4)
ISBN: 978-1-62332-095-9 (Print)
ISBN: 978-1-60768-449-7 (PDF)
pp.81-86
Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies <3, 2013, San Francisco/Calif.>
Electrochemical Society (ECS Meeting) <224, 2013, San Francisco/Calif.>
Bundesministerium für Bildung und Forschung BMBF
Program Inter Carnot Fraunhofer (PICF); 01SF0804; MobiSiC
English
Conference Paper
Fraunhofer IISB ()
SiC; MOSFETs; hall factor

Abstract
To interpret Hall-effect measurements in a range of temperatures, the Hall factor for the electron transport in the channel of a SiC MOSFETs was evaluated. The method of the Hall factor calculation is based on the interdependence with mobility components via the respective scattering relaxation times. For the first time, the temperature dependence of the Hall factor in n-channel 4H-SiC MOSFETs was calculated. The results of the calculation reveal a strong reduction of the Hall factor with increasing temperature. Depending on gate voltage and temperature, the values of the Hall factor vary between 1.2 and 1.5. In addition, the sheet carrier densities and drift mobilities derived from the Hall-effect measurements using our new temperature-dependent Hall factor show very good agreement with i ndependent simulation results.

: http://publica.fraunhofer.de/documents/N-275416.html