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Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

: Zhou, D.Y.; Xu, J.; Li, Q.; Guan, Y.; Cao, F.; Dong, X.L.; Müller, J.; Schenk, T.; Schröder, U.


Applied Physics Letters 103 (2013), No.19, Art.192904, 4 pp.
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
ISSN: 1931-9401 (online)
Journal Article
Fraunhofer IPMS ()

Hafnium oxide based ferroelectric thin films have shown potential as a promising alternative material for non-volatile memory applications. This work reports the switching stability of a Si-doped HfO2 film under bipolar pulsed-field operation. High field cycling causes a "wake-up" in virgin "pinched" polarization hysteresis loops, demonstrated by an enhancement in remanent polarization and a shift of negative coercive voltage. The rate of wake-up is accelerated by either reducing the frequency or increasing the amplitude of the cycling field. We suggest de-pinning of domains due to reduction of the defect concentration at bottom electrode interface as origin of the wake-up.