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Integral transform and state modeling of 0.1 µm AlGaN/GaN HEMTs for pulsed-RF and CW operation

: Raay, F. van; Quay, R.; Seelmann-Eggebert, M.; Schwantuschke, D.; Maier, T.; Schlechtweg, M.; Ambacher, O.

European Microwave Association:
8th European Microwave Integrated Circuits Conference, EuMIC 2013. Proceedings : 6-8 Oct 2013, Nuremberg, Germany; Part of European Microwave Week
Piscataway, NJ: IEEE, 2013
ISBN: 978-2-87487-032-3
ISBN: 978-1-4799-0266-8
European Microwave Integrated Circuits Conference (EuMIC) <8, 2013, Nuremberg>
European Microwave Week (EuMW) <16, 2013, Nuremberg>
Conference Paper
Fraunhofer IAF ()
AlGaN/GaN HEMTs modeling; drain lag; gate lag; trapping effects; parameter extraction; model verification

A recent approach for low-frequency dispersion modeling of III-V FET devices using combined integral transform and state description is applied to an emerging AlGaN/GaN HEMT technology with a gatelength of 0.1 µm. The state-dependencies of the key parameters drain current, RF transconductance and output conductance, and the chargecontrol capacitances are derived from pulsed-RF S-parameter measurements. The model predicts the large-signal performance of the device for both CW and pulsed-RF operation with different quiescent bias settings. A sophisticated approach for the calculation of the low-frequency part of the drain current results in an improved PAE prediction of the model. In addition, analytic expressions are used for the nonlinear model functions instead of table-lookup for improved simulation speed and better convergence.