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A linear 4W power amplifier at K-band using 250nm AlGaN/GaN HEMTs

 
: Friesicke, C.; Quay, R.; Rohrdantz, B.; Jacob, A.F.

European Microwave Association:
8th European Microwave Integrated Circuits Conference, EuMIC 2013. Proceedings : 6-8 Oct 2013, Nuremberg, Germany; European Microwave Week
London: Horizon House, 2013
ISBN: 978-2-87487-032-3
pp.157-160
European Microwave Integrated Circuits Conference (EuMIC) <8, 2013, Nuremberg>
European Microwave Week (EuMW) <16, 2013, Nuremberg>
English
Conference Paper
Fraunhofer IAF ()
gallium nitride; high power amplifiers; MMICs; K-band; satellite communication; intermodulation distortion

Abstract
This paper presents the design, realization, and measured performance of a K-band high power amplifier using an AlGaN/GaN HEMT on semi-insulating SiC technology with a gate length of 250 nm. The amplifier is a two-stage design with a staging ratio of 1:2. It employs a 6*90 µm driver cell and two 6*90 µm cells in the second stage. Using a drain supply voltage of 28V, the amplifier delivers a saturated output power of >4W (36 dBm) and exhibits a peak PAE of 34 %, both at a frequency of 22 GHz. When biased for peak PAE, the linear gain is 16 dB. Intermodulation measurements at 22GHz with 1MHz two-tone spacing show a third-order (OIP(3)) and fifth-order output intercept point (OIP(5)) of 40dBm and 35 dBm, respectively. A third-order intermodulation ratio C/IM3 of >16 dB is achieved at an output power of 1W per carrier.

: http://publica.fraunhofer.de/documents/N-272328.html