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QFN-packaged highly-linear cascode GaN LNA MMIC from 0.5 to 3 GHz

: Maroldt, S.; Aja, B.; Raay, F. van; Krause, S.; Brueckner, P.; Quay, R.

European Microwave Association:
8th European Microwave Integrated Circuits Conference, EuMIC 2013. Proceedings : 6-8 Oct 2013, Nuremberg, Germany; European Microwave Week
London: Horizon House, 2013
ISBN: 978-2-87487-032-3
European Microwave Integrated Circuits Conference (EuMIC) <8, 2013, Nuremberg>
European Microwave Week (EuMW) <16, 2013, Nuremberg>
Conference Paper
Fraunhofer IAF ()
GaN; LNA; MMIC; broadband; cascode; linearity; feedback amplifier; mobile communications

A GaN high electron mobility transistor technology with a gate length of 0.25 µm has been used to design and fabricate a cascode broadband low noise amplifier (LNA). The two-stage monolithic microwave integrated circuit (MMIC) with feedback topology yields a bandwidth of 0.5-3 GHz at a constant gain of 35 dB and noise figures of less than 1.5 dB. A third order intercept point (OIP3) of up to 42.5 dBm was measured at 0.8 GHz, with a linear output power of 24 dBm over the full bandwidth. The MMIC was further assembled and measured in a low-cost plastic QFN package on an evaluation board with optimized thermal design and passive cooling. At a power dissipation of ~3 W the packaged LNA yields an OIP3 of 35- 38 dBm over the full bandwidth at a noise figure of < 1.9 dB.