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Influence of copper on the diffusion length of the minority carriers in devices based on n-type Si/SiO2

: Kolkovsky, V.; Lukat, K.


Microelectronics reliability 53 (2013), No.9-11, pp.1342-1345
ISSN: 0026-2714
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) <24, 2013, Arcachon>
Journal Article, Conference Paper
Fraunhofer IPMS ()

In the present study we demonstrate that the introduction of Cu leads to a significant reduction of the diffusion length in n-type Si/SiO2 structures. Using capacitance versus time measurements we show that the quasi-neutral generation mechanism is not dominant in Cu-contaminated samples at 90 °C. We correlate this behaviour with Cu-related defects which act as strong recombination centres in Si. Their electrical properties are determined and their origin will be discussed.