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A normal-incidence PtSi photoemissive detector with black silicon light trapping

: Steglich, Martin; Zilk, Matthias; Bingel, Astrid; Patzig, Christian; Käsebier, Thomas; Schrempel, Frank; Kley, Ernst-Bernhard; Tünnermann, Andreas


Journal of applied physics 114 (2013), No.18, Art. 183102, 9 pp.
ISSN: 0021-8979
ISSN: 1089-7550
Journal Article
Fraunhofer IOF ()
Fraunhofer IWM ( Fraunhofer IWM-H) ()
black silicon light-trapping; Si-based photoemissive detectors

A normal-incidence light-trapping scheme relying on black silicon surface nanostructures for Si-based photoemissive detectors, operating in the IR spectral range, is proposed. An absorptance enhancement by a factor of 2-3 is demonstrated for technologically most relevant, ultrathin (2 nm - 3 nm) PtSi rear layers on Si. It is shown that this increase can be translated into an equivalent increase in responsivity because of the absorption limitation of detector performance. Pd2Si/p-Si detectors with black silicon are suggested as promising candidates for room temperature detection in the third optical window with an expected external quantum efficiency in the range of 9%-14%.