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High frequency scanning acoustic microscopy applied to 3D integrated process: Void detection in through silicon vias

: Phommahaxay, A.; Wolf, I. de; Hoffrogge, P.; Brand, S.; Czurratis, P.; Philipsen, H.; Civale, Y.; Vandersmissen, K.; Halder, S.; Beyer, G.; Swinnen, B.; Miller, A.; Beyne, E.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Components, Packaging, and Manufacturing Technology Society:
IEEE 63rd Electronic Components and Technology Conference, ECTC 2013. Proceedings : 28-31 May 2013, Las Vegas, NV, USA
New York, NY: IEEE, 2013
ISBN: 978-1-4799-0233-0 (Print)
ISBN: 978-1-4799-0232-3
Electronic Components and Technology Conference (ECTC) <63, 2013, Las Vegas/Nev.>
Conference Paper
Fraunhofer IWM ()
Through Silicon Via (TSV) technology; GHz Scanning Acoustic Microscopy (SAM); defect detection

Among the technological developments pushed by the emergence of 3D-ICs, Through Silicon Via (TSV) technology has become a standard element in device processing over the past years. As volume increases, defect detection in the overall TSV formation sequence is becoming a major element of focus nowadays. Robust methods for in-line void detection during TSV processing are therefore needed especially for scaled down dimensions. Within this framework, the current contribution describes the successful application of innovative GHz Scanning Acoustic Microscopy (SAM) to TSV void detection in a via-middle approach.