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Midinfrared luminescence imaging and its application to the optimization of light-emitting diodes

: Weik, F.; Tomm, J.W.; Glatthaar, R.; Vetter, U.; Szewczyk, D.; Nurnus, J.; Lambrecht, A.; Mechold, L.; Spellenberg, B.; Bassler, M.; Behringer, M.; Luft, J.


Applied Physics Letters 86 (2005), No.4, Art. 041106, 3 pp.
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer IPM ()

Midinfrared luminescence imaging spectroscopy is used for evaluating surface structures etched into narrow-gap PbSe films. These structures provide a luminescence enhancement by a factor of 6. On the basis of such structures an optically pumped luminescence device is realized. A maximum cw output power of 0.5 mW and a slope efficiency of 0.2 mW/A are obtained at 25 °C. The power efficiency amount s to 2.3310−2%. The emission wavelength is 4.2 µm, with a half width of 0.8 µm (50 meV). Such devices are promising light sources for a new generation of gas detection systems.