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2013
Journal Article
Titel
Interstitial chromium in silicon on the micron scale
Abstract
Imaging the Photoluminescence (PL) intensities related to recombination via the two metastable states of chromium in boron doped silicon is a highly sensitive means for measuring the spatially resolved interstitial chromium concentration ([Cri]) in silicon. In this work we show that the straightforward combination of this method with a micro PL Spectroscopy (mPLS) setup allows for the detection of [Cri] with micrometre resolution. Measurements performed on a chromium contaminated multicrystalline (mc) silicon wafer show impurity inhomogeneity on the micron scale, yielding a proof of principle and revealing new insight into chromium concentration variations around defects.