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Interstitial chromium in silicon on the micron scale

: Heinz, F.D.; Schindler, F.; Warta, W.; Schubert, M.C.

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Energy Procedia 38 (2013), pp.571-575
ISSN: 1876-6102
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <3, 2013, Hameln>
Journal Article, Conference Paper, Electronic Publication
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; Charakterisierung; Zellen und Module; Photoluminescence; Silicon; Microscope; Chromium

Imaging the Photoluminescence (PL) intensities related to recombination via the two metastable states of chromium in boron doped silicon is a highly sensitive means for measuring the spatially resolved interstitial chromium concentration ([Cri]) in silicon. In this work we show that the straightforward combination of this method with a micro PL Spectroscopy (μPLS) setup allows for the detection of [Cri] with micrometre resolution. Measurements performed on a chromium contaminated multicrystalline (mc) silicon wafer show impurity inhomogeneity on the micron scale, yielding a proof of principle and revealing new insight into chromium concentration variations around defects.