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2013
Conference Paper
Titel
Study of the electrical insulation of dielectric passivation layers and stacks for back-contact back-junction silicon solar cells
Abstract
Within this work an intensive study concerning the electrical insulation of dielectric passivation layers is carried out. Therefore, metal-insulator-semiconductor (MIS) structures are manufactured. By using a 4-point measurement setup with ultra-sensitive piko-ampere meters, shunt resistances of the insulation layers and stacks within these MIS-structures are determined. Most promising is the combination of atomic layer deposited (ALD) aluminum oxide (Al2O3) with a thickness of 20 nm and plasma enhanced chemical vapor deposited (PECVD) silicon oxide (SiOx) with a thickness of 1500 nm. These layers allow for median shunt resistances higher than 30 Mcm2 and a complete electrical insulation of wafers with an edge length of 156 mm. It is shown that the layer thickness of both, Al2O3 and SiOx, have a significant impact on the insulation properties of the whole stack. Defects in insulation layers which are short-circuited by the metallization are made visible by infra red (IR) measurements.
Author(s)
Tags
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PV Produktionstechnologie und Qualitätssicherung
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Silicium-Photovoltaik
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Dotierung und Diffusion
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Kontaktierung und Strukturierung
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Herstellung und Analyse von hocheffizienten Solarzellen
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Pilotherstellung von industrienahen Solarzellen
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Solarzellen - Entwicklung und Charakterisierung
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devices
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properties
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passivation
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Farbstoff
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Organische und Neuartige Solarzellen
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Farbstoffsolarzellen
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Degradation
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Solar Cell
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Spectroscopy
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Stability
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