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Potential-induced degradation on cell level: The inversion model
: Saint-Cast, P.; Nagel, H.; Wagenmann, D.; Schön, J.; Schmitt, P.; Reichel, C.; Glunz, S.W.; Hofmann, M.; Rentsch, J.; Preu, R.
The field effect model for potential-induced degradation of p-type crystalline silicon solar cells postulates an inversion of the emitter surface. The electrical properties of the inversion layer was evaluated based on theoretical considerations and the effect of the inversion layer on the solar cell device was modeled. Finally, our theoretical model was compared to experimental data. As a result, the inversion layer alone cannot explain the observed shunting of the solar cells.