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Potential-induced degradation on cell level: The inversion model

: Saint-Cast, P.; Nagel, H.; Wagenmann, D.; Schön, J.; Schmitt, P.; Reichel, C.; Glunz, S.W.; Hofmann, M.; Rentsch, J.; Preu, R.

Fulltext urn:nbn:de:0011-n-2669284 (104 KByte PDF)
MD5 Fingerprint: b82daf56c8cece6a218096b66e0807ad
Created on: 7.12.2013

Mine, A. ; European Commission:
28th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2013. Proceedings. DVD-ROM : 30 September to 04 October 2013, Paris, France
München: WIP-Renewable Energies, 2013
ISBN: 3-936338-33-7
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <28, 2013, Paris>
Conference Paper, Electronic Publication
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Herstellung und Analyse von hocheffizienten Solarzellen; Pilotherstellung von industrienahen Solarzellen; Degradation; Reliability; Layer; Cells; Model

The field effect model for potential-induced degradation of p-type crystalline silicon solar cells postulates an inversion of the emitter surface. The electrical properties of the inversion layer was evaluated based on theoretical considerations and the effect of the inversion layer on the solar cell device was modeled. Finally, our theoretical model was compared to experimental data. As a result, the inversion layer alone cannot explain the observed shunting of the solar cells.