Abstract
The scope of this work is to investigate the influence of photonic structures (i.e. angle or spectral selective filters) on the effective band gaps of semiconductors. This especially is interesting to influence the working points of solar cells. The concepts investigated within this work will only be pronounced for direct band gap semiconductors (high fraction of radiative recombination). Thus, predestined systems to evaluate such effects are light emitting diodes (LED). In this work the understanding of occurring processes in a realistic system shall be deepened with the help of fundamental experiments.