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Overview about technology perspectives for high efficiency solar cells for space and terrestrial applications

: Bett, A.W.; Philipps, S.P.; Essig, S.; Heckelmann, S.; Kellenbenz, R.; Klinger, V.; Niemeyer, M.; Lackner, D.; Dimroth, F.

Fulltext urn:nbn:de:0011-n-2669143 (138 KByte PDF)
MD5 Fingerprint: a3691557175bba0620c2e0f8b55456e9
Created on: 6.12.2013

Mine, A. ; European Commission:
28th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2013. Proceedings. DVD-ROM : 30 September to 04 October 2013, Paris, France
München: WIP-Renewable Energies, 2013
ISBN: 3-936338-33-7
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <28, 2013, Paris>
Conference Paper, Electronic Publication
Fraunhofer ISE ()
Materialien - Solarzellen und Technologie; III-V und Konzentrator-Photovoltaik; III-V Epitaxie und Solarzellen; Semiconductors; Multijunction Solar Cell; Concentrator Cells; Space Cells

III-V multi-junction solar cells have become standard in space and in terrestrial concentrator systems. The current landmark for III-V multi-junction solar cells is the Ga0.50In0.50P/Ga0.99In0.01As/Ge triple-junction, which only contains lattice-matched layers. This MOVPE-grown device is available from different suppliers in large quantities. Due to the mature development status of this device new concepts are being investigated to increase the efficiencies further. A toolbox of new ideas and methods is available such as metamorphic and/or inverted growth, wafer bonding, different substrates, nanostructures, MBE growth and new materials. These have been used and combined intensively in recent years to develop and realize new structures of III-V multi-junction solar cells. This paper gives an overview about the technology perspectives and research trends in III-V multi-junction solar cells. Eventually, a new record efficiency value of 44.7% @ 297xAM1.5d for a 4-junction wafer-bonded solar cell is presented.