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OLED emission zone measurement with high accuracy

: MacCiarnain, Rossa; Michaelis, Dirk; Wächter, Christoph; Danz, Norbert


So, F. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Organic Light Emitting Materials and Devices XVII : 25-28 August 2013, San Diego, California
Bellingham, WA: SPIE, 2013 (Proceedings of SPIE 8829)
ISBN: 978-0-8194-9679-9
Paper 882923
Conference "Organic Light Emitting Materials and Devices" <17, 2013, San Diego/Calif.>
Conference Paper
Fraunhofer IOF ()
organic light-emitting diode; profile of the emission zone; optical simulation; in situ characterization

Highly efficient state of the art organic light-emitting diodes (OLED) comprise thin emitting layers with thicknesses in the order of 10 nm. The spatial distribution of the photon generation rate, i.e. the profile of the emission zone, inside these layers is of interest for both device efficiency analysis and characterization of charge recombination processes. It can be accessed experimentally by reverse simulation of far-field emission pattern measurements. Such a far-field pattern is the sum of individual emission patterns associated with the corresponding positions inside the active layer. Based on rigorous electromagnetic theory the relation between far-field pattern and emission zone is modeled as a linear problem. This enables a mathematical analysis to be applied to the cases of single and double emitting layers in the OLED stack as well as to pattern measurements in air or inside the substrate. From the results, guidelines for optimum emitter – cathode separation and for selecting the best experimental approach are obtained. Limits for the maximum spatial resolution can be derived.