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Recent developments in GaN HEMTs and MMICs for high power electronics

: Waltereit, P.; Bronner, W.; Brueckner, P.; Dammann, M.; Reiner, R.; Müller, S.; Kühn, J.; Musser, M.; Quay, R.; Mikulla, M.; Ambacher, O.

Japan Society of Applied Physics -JSAP-:
International Conference on Solid State Devices and Materials, SSDM 2013. CD-ROM : September 24-26, 2013; Fukuoka, Japan; Extended Abstracts
Tokyo: JSAP, 2013
ISBN: 9784863483620
3 pp.
International Conference on Solid State Devices and Materials (SSDM) <2013, Fukuoka>
Conference Paper
Fraunhofer IAF ()

Due to its outstanding materials properties the semi-conductor system (Al,Ga)N is a very promising candi-date for high power electronic applications covering communication, radar and power conversion. In fact GaN is already considered to be the most important semiconductor besides silicon. In this invited contribu-tion we give an overview of epitaxial growth, device processing, characterization and reliability assessment of electronic devices based on this material.